The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

612 / 2019-03-15 22:30:29

High Performance SEB Hardened Trench Power MOSFET with Partially Widened Split Gate and Trench Source

Trench power MOSFETs, siTrench power MOSFETs, single-event burnout (SEB), widened split gate, parasitic bipolar transistor

Plenary track > Power Electronics

In this paper, an optimized trench power MOSFET is presented with three-dimensional (3D) TCAD simulation. A superior device’s performance can be achieved by using the partially widened split gate and the trench source. Simulation results indicate that the new structure can present a better breakdown ability and a good RDS(ON)×QGD FOM compared with the conventional structure. From the simulation result, the proposed structure shows no SEB under the device’s 200V rated breakdown voltage and the LET value of 1pC/m (100MeVcm2mg-1, approximately the maximum LET energy of gold or bismuth ion). That means, the proposed structure will not exhibit SEB under heavy ions Therefore, the new structure demonstrates a good