Abstract Details
614 / 2019-03-15 22:41:49
A 0.75GHz-1.75GHz SiGe LNA for Cryogenic Application
SiGe HBT, cryogenic environment, low noise amplifier, impendence matching, noise figure
Final Paper
A 0.75GHz-1.75GHz SiGe LNA for cryogenic application is presented. At room temperature(300K), the LNA achieves 1GHz bandwidth, 17dB gain and 1.75dB noise figure, while consuming 1.8mA from a 2.8V power supply. At cryogenic temperature(77K), the LNA achieves 16dB gain and 1.5dB noise figure from 0.75GHz to 1.75GHz with good impendence matching. The stability of the relevant passive devices and FR4 PCB material is verified to pave road for cryogenic circuit design.
Important Date
-
Conference Date
Jun 12
2019
toJun 14
2019
-
Jun 12 2019
Draft paper submission deadline
-
Jun 14 2019
Registration deadline
Organized By
Xi'an University of Technology
Contact Information
- Dr. Zhaonian Yang
- ed******@126.com
- 177********
Previous Conferences
-
2025-06-06 China Yinchuan
2025 IEEE International Conference on Electron Devices and Solid-State Circuits -
2017-10-18 Taiwan, China
2017 International Conference on Electron Devices and Solid-State Circuits -
2016-08-03 Hong Kong, China Hongkong，China
2016 IEEE International Conference on Electron Devices and Solid-State Circuits -
2015-06-01 Singapore
2015 IEEE International Conference on Electron Devices and Solid-State Circuits
