The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

617 / 2019-03-15 22:51:26

A fast off and low current crowding MOS-controlled thyristor with Schottky junction in the OFF-FET

MOS-controlled thyristor,current crowding,pulse power

Plenary track > Power Electronics

A fast off and low current crowding MOS-controlled thyristor (MCT) with Schottky junction in the OFF-FET (S-MCT) is developed for pulse power applications. The proposed S-MCT split the emitter into two parts. One in contact with the thyristor is ohmic contact, and the other in contact with OFF-FET is Schottky contact. This design adds a Schottky diode between the electrode and the OFF-FET to help the device turn off quickly while keeping the forward advantage of MCT. The simulation results also show that compared with the traditional MCT (C-MCT), S-MCT can achieve a significant reduction in the rate of current crowding (from 85.5 % to 15.7 %), which occurs in the OFF-FET during turning off.