The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

627 / 2019-03-17 11:45:52

Review of SiC MOSFET Drive Circuit

Silicon Carbide (SiC) devices; Switching characteristics; drive circuit

Plenary track > Silicon Devices

SiC MOSFET（Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor）has received extensive attention from researchers for its superior characteristics. Profiting from its material advantages, SiC MOSFETs possess lower switching losses, lower on-resistance and excellent thermal performance.There is a large amount of literature on the research of SiC MOSFET drive circuits, but there is still a lack of systematic summary of SiC MOSFET drive circuit and its applications. This paper summarizes the key features of SiC MOSFETs need to be focused on in practical applications.In addition, the different SiC MOSFET driver circuits are summarized and reviewed. Finally, how to choose the appropriate SiC MOSFET driver circuit and future research directions is pointed out.