The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

628 / 2019-03-17 12:30:22

Study of the Infrared Absorption Characteristics of the AlGaN/GaN Super-lattices

AlGaN/GaN superlattice, MOCVD, HRXRD, TEM, infrared absorption

Plenary track > Compound Semiconductor Devices

For AlGaN/GaN superlattices (SLs) structure have shown their potential in the development of dual-band UV- and infrared- photodetectors, the infrared absorption properties of AlGaN/GaN SLs is presented in this paper. Based on the theoretical simulation, the AlGaN/GaN SLs structures were designed and grown by MOCVD. The absorption characteristics of the AlGaN/GaN SLs was performed by HRXRD and TEM, showing an absorption wavelength range of 2.92~4.65μm, which meets the demand for infrared detection.