The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

632 / 2019-03-19 12:05:53

Electrical Resistivity Model for SSTA of Cu Nanowires

Nanowires,resistivity model,electron scattering,process variations,statistical

Plenary track > Modeling and Simulation Technology

With the further shrinking of interconnect line, electrical resistivity model of Cu wires becomes more important and complex. Especially, for Cu nanowires are close to, even less than the electron mean free path, the effects of scattering must be considered. With the increasing of aspect ratios, this is more and more influenced by process details leading to process variability has become a major issue in IC design and verification. In addition, SSTA is still an effective modeling method of process variations. A simple, accurate and efficient electrical resistivity model is needed. In this paper, an electrical resistivity model for SSTA of Cu nanowires is proposed, which has good accuracy and a simple form. The errors of the model are less than 1% compared with exact solution. And the model has good distributing characteristics in SSTA, whose errors of mean and average deviation are less than 1%.