The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

633 / 2019-03-19 21:54:43

Improving the Performance of Organic Field-Effect Transistors by Using WO3 Buffer Layer

Organic field-effect transistor,Buffer layer,Carrier injection barrier,Carrier mobility

Plenary track > Organic Electronics

Tungsten trioxide(WO3) was employed to modify the source and drain copper electrodes in OFETs based on pentacene. The effect of WO3 with different thickness on devices was investigated. Through the XPS test, it is found that the electric charge transfer from Cu to WO3 modified layer at the contact area to form a high conductivity region. At the same time, the WO3 as a barrier layer, can effectively suppress the generation of the interface dipole layer between the Cu electrode and the pentacene layer, thus reducing the carrier injection potential.