Abstract Details
639 / 2019-03-22 11:14:47
A Novel IE-Bi-MCT Structure Rated up to 6.5kV for Lower Losses
the electron injection enhancement (IE),Base resistance control thyristor (BRT),Thyristor mode,MOS-controlled thyristor (MCT)
Final Paper
A novel electron injection enhanced Bi-mode MOS controlled thyristor structure (IE-Bi-MCT) is proposed in this paper, which is formed by introducing the electron injection enhancement (IE) into the structure of the base resistance-controlled thyristor (BRT) with effect. Take 6500V as an example, the static and dynamic characteristic of IE-BiMCT is analyzed by Sentaurus-TCAD simulator, the results show that this structure achieves a good trade-off between onstate loss (Eon) and turn-off loss (Eoff).
Important Date
-
Conference Date
Jun 12
2019
toJun 14
2019
-
Jun 12 2019
Draft paper submission deadline
-
Jun 14 2019
Registration deadline
Organized By
Xi'an University of Technology
Contact Information
- Dr. Zhaonian Yang
- ed******@126.com
- 177********
Previous Conferences
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2025-06-06 China Yinchuan
2025 IEEE International Conference on Electron Devices and Solid-State Circuits -
2017-10-18 Taiwan, China
2017 International Conference on Electron Devices and Solid-State Circuits -
2016-08-03 Hong Kong, China Hongkong，China
2016 IEEE International Conference on Electron Devices and Solid-State Circuits -
2015-06-01 Singapore
2015 IEEE International Conference on Electron Devices and Solid-State Circuits
