The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

642 / 2019-03-22 16:39:24

Analysis of blocking characteristic of 3300V RB-IGBT

RB-IGBT; bi-directional blocking; high-voltage

Plenary track > Silicon Devices

Abstract- RB-IGBT not only has bidirectional blocking capability, but also has the advantages of reduced on-state voltage, low cost and simple circuit structure compared with conventional IGBT connected in series with a diode. In this paper, a 3300V RB-IGBT is designed to solve the problem of large number of devices and large on-state voltage drop in bi-directional switches in traditional matrix converters. The forward and reverse breakdown characteristics of the 3300V RB-IGBT are discussed.