The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

644 / 2019-03-22 17:23:34

A 6.5kV FSRD structure with an epitaxial p buffer and diffused n buffer layers

Keywords—fast soft recovery diode (FSRD), dynamic avalanche, epitaxy, buffer layer

Plenary track > Silicon Devices

Abstract—A high voltage FSRD structure with a low concentration epitaxial p buffer layer and diffused n buffer layer is studied in this paper. The forward conducting, reverse blocking and reverse recovery characteristics of the p+pn-nn+ diode are analyzed by 2D numerical simulation. The results show that the p+pn-nn+ structure has the better characteristics and dynamic avalanche ruggedness compared with the conventional structure, such as, p+n-nn+ and p+pn-nn+ diodes with same thickness of device.