The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

669 / 2019-04-12 10:44:21

An Analytical Model for Hybrid Multiple-Gate (HMG) Tunnel FET

Quasi-3D/quasi-2D potential approach, Kane’s model, Quasi-3D/quasi-2D scaling theory, Scaling length, Scaling factor, Threshold voltage , Hybrid multiple-gate tunnel FET

Plenary track > Modeling and Simulation Technology

Based on the quasi-3D/quasi-2D scaling theory, quasi-3D/quasi-2D potential approach, WKB approximation and Kane’s model, a new analytical model including the channel potential, on/off drain current, and threshold voltage is developed for the hybrid multiple-gate (HMG) tunnel FET (TFET) with a small scaling length (SRG) of surrounding-gate (SRG) TEFT near the source side and a large scaling length (DG) of double-gate (DG) TEFT near the drain side. It is found that with the HMG structure, the tunnel path caused by SRG in the source-channel region can be effectively decreased, which hence enhances the on-state current. Besides, the off-state current can be efficiently suppressed by the HMG structure due to long tunnel path induced by DG in the drain-channel region.