The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

679 / 2019-05-11 03:46:03

SiC Power Device Evolution Opening a New Era in Power Electronics

silicon carbide (SiC), power device, MOSFET, IGBT, Schottky barrier diode (SBD), wide bandgap semiconductor, single event burnout (SEB)

Plenary track > Power Electronics

A new era in power electronics has been just opened by commercial introduction of silicon carbide (SiC) MOSFETs in a variety of power electronic systems such as power supplies, renewable energy, transportation, heating, robotics, and electric utility transmission/distribution. The utilization of SiC power devices in these systems can enable significant energy saving because of much lower power-loss devices compared to conventional silicon (Si) power devices. In this paper the progress of SiC power transistors is presented in comparison with Si MOSFETs and IGBTs.