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135 / 2019-01-24 21:11:28
Indium tin oxide thin films prepared by dc magnetron sputtering for transparent heating
ITO, Dc sputter, Transparent, Conducting
Plenary track > Advanced Instrumentation Based on Micro and Nanotechnologies
Abstract Accepted
Jianhua Li / National Institute of Metrology
Xueshen Wang / National Institute of Metrology
Pingwei Lin / National Institute of Metrology
XInhua Chen / Beijing University of Civil Engineering and Architecture
Longfa Zhang / Beijing University of Civil Engineering and Architecture
Shuo Liu / Beijing University of Civil Engineering and Architecture
This paper reported a research on conducting tin-doped indium oxide (ITO) films fabricated by dc magnetron sputtering for transparent heating. ITO films with a thickness of 130 nm were deposited on BF33 glass substrates, followed by an annealing process in N2 atmosphere for 2 h at 450 ℃. The crystal structure, surface morphology, optical and electrical properties of ITO films were characterized. The predominant crystal face orientation was (222). The transmittance from 400 nm to 800 nm was 92.5%. Results showed that the sheet resistance and resistivity increased but the temperature coefficient of resistance (TCR) decreased with the larger oxygen flow. A low TCR and proper resistivity were the key factors for the application of conducting transparent heating.
Important Date

  • Conference Date

    Sep 17

    2019

    to

    Sep 19

    2019

  • Mar 17 2019

    Draft paper submission deadline

  • Apr 30 2019

    Draft Paper Acceptance Notification

  • May 31 2019

    Final Paper Deadline

  • Sep 19 2019

    Registration deadline

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