The 4th International Conference on Matter and Radiation at Extremes (ICMRE 2019)

459 / 2019-03-11 22:27:52

High-pressure synthesis and characterization of K0.3Ga2O3

high temperature and high pressure

Plenary track > High Pressure Physics and Materials Science

The well-crystallized ternary semiconductor material K0.3Ga2O3 has been successfully synthesized by a high pressure and high temperature method. Single crystal X-ray diffraction and TEM determined its hexagonal crystal structure (P63/mmc), and cell parameters (a=5.84530 Ǻ，b=5.84530 Ǻ，c=23.39790 Ǻ). Photoluminescence measurement shows that K0.3Ga2O3 is good ternary semiconductor material with violet-green emission properties (Eg≈2.34 eV). High-pressure Raman experiments reveals that K0.3Ga2O3 can be stable up to at least 23 GPa.