The 4th International Conference on Matter and Radiation at Extremes (ICMRE 2019)

536 / 2019-03-20 09:14:49

Pressure impact on the crystal structure, optical, and transport properties in high mobility semiconductor Bi2O2Se

Bi2O2Se, high pressure,photocurrent,electrical resistivity

Plenary track > High Pressure Physics and Materials Science

Recently, ultrathin Bi2O2Se has been synthesized, and it possesses ultrahigh mobility. In addition, moderate bandgap (0.8 eV) together with its stability in the ambient environmentand easy accessibility, make Bi2O2Se a promising semiconductor candidate for future ultrafast high-performance and low-power electronic devices. Herein, we present the combined experimental and theoretical investigations the compression behaviors of Bi2O2Se under high pressure. HP-XRD measurement show that the tetragonal structure of Bi2O2Se presents a remarkable high stability with no phase transition up to 50 GPa. However, HP-RS measurement show that Alg and B1g modes splitting at 53 and 32 GPa, respectively. In addition，We have performed electrical resistivity and photocurrent measurements of Bi2O2Se under high pressure.