586 / 2019-03-20 22:33:51
Equation of state and phase diagram of 4H-silicon carbide investigated by laser shock compression
equation of state, phase diagram, silicon carbide, shock compression
Abstract Accepted
江涛 李 / 中物院流体物理研究所
秀霞 操 / 中物院流体物理研究所
舒 桦 / 中物院上海激光等离子体研究所
建波 胡 / 中物院流体物理研究所
杨 靖 / 中物院流体物理研究所
张 航 / 中物院流体物理研究所
The equations of state and phase diagram of a fundamental component of planets like silicon carbide is important for building planetary interior models. In this work, the shock Hugoniot states of 4H-silicon carbide single crystal are produced by laser shock compression. The shock velocity is monitored using a velocity interferometer system and the optical emission is collected by a streak optical pyrometer. The experimental Hugoniot data, as well as the theoretical 0-K equation of state data, helps us to construct a more accurate Gruneisen equation of state model. According to this model and the Lindermann relation, a high pressure phase diagram of 4H-silicon carbide can be established.
Important Date
  • Conference Date

    May 29

    2019

    to

    Jun 02

    2019

  • Mar 20 2019

    Abstract Submission Deadline

  • Mar 20 2019

    Draft paper submission deadline

  • Apr 10 2019

    Abstract Notification of Acceptance

  • Jun 02 2019

    Registration deadline

Organized By
Institute of Applied Physics and Computational Mathematics
Laser Fusion Research Center, China Academy of Engineering Physics
Xi'an Jiaotong University
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