8th International Conference on Advanced Power System Automation and Protection (APAP2019)

985 / 2019-05-02 20:28:39

Research on HV-PWM based on Enhancement Mode GaN HEMT

High voltage; large current; high speed; Pulse Power Modulator; GaN HEMT.

The main role of Pulse Power Modulator is to offer pulse power for RF Power Transistor. In order to realize the needs of high voltage, high switching speed and large current for Pulse Power Modulator, a new design method based on enhancement mode GaN HEMT is proposed in this paper. Using this method, the high-voltage Pulse Power Modulator can provide perfect performance for the modulation, as rising edge and falling edge about 10ns, peak voltage about 110V and peak current about 170A, which is suitable for driving high-voltage and high-power RF Power Transistor. The enhancement mode GaN HEMT, whose D-S breakdown voltage is up to 200V and peak-current up to 200A, is researched by Nanjing Electronic Devices Institute.