Abstract Details
113 / 2021-03-18 14:19:50
Improved performance of GaN-based LEDs with PVD AlN
PVD AlN, crystal quality, LEDs
Final Paper
The crystal quality of GaN based light emitting diodes (LEDs) with sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. Is was found that the crystal quality in terms of defect density and X-ray diffraction linewidth was greatly improved. The light output power was increased, and reverse bias voltage of leakage current was increased on LEDs with PVD AlN nucleation layers.
Important Date
-
Conference Date
Jul 10
2021
toJul 12
2021
-
May 10 2021
Draft paper submission deadline
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Jul 06 2021
Registration deadline
Sponsored By
Changsha University of Science & Technology
Supported By
IEEE Electron Devices Society
IEEE
IEEE
Contact Information
- Dr. WanghuiZou
- zo******@csust.edu.cn
- 135********
Previous Conferences
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2018-05-07 Taiwan, China
2018 7th International Symposium on Next Generation Electronics -
2017-05-23 Taiwan, China Keelung
2017 6th International Symposium on Next Generation Electronics
