2021 9th International Symposium on Next Generation Electronics (ISNE2021)

118 / 2021-04-06 21:54:15

Design and Characterization of an SCR with separate bipolar transistors for ESD Protection

Electrostatic discharge (ESD),high holding voltage,low-voltage triggered silicon-controlled (LVTSCR)

Microelectronic Devices and Materials > Silicon Integrated Circuits Technologies

An optimized segmentation topology is developed to enhance the holding voltage. Compared with the traditional LVTSCR, the holding voltage of the proposed device increases to 5.63 V. Besides, the transmission line pulse tests show the improvement of the holding voltage and the effect of temperature on key ESD parameters.