2021 9th International Symposium on Next Generation Electronics (ISNE2021)

122 / 2021-04-09 16:33:12

A High Power X-band GaN Solid-State Power Amplifier with 55% PAE

Solid-State Power Pmplifier (SSPA), Gallium Nitride(GaN), High electron mobility transistor (HEMT), X-band, Power Added Efficieny (PAE)

RF and Microwave Circuits > RF circuits

Abstract—In this work, a design of X-band solid-state power amplifier (SSPA) is proposed. Its operating frequency is from 7.7 GHz to 8.5 GHz, and the matching circuit is designed as a band-pass filter circuit. The results show that the power added efficiency of the single-stage power amplifier designed by GaN HEMT can reach 55%, the saturated output power is 51.5 dBm, and the maximum power gain can reach about 12 dB.