2021 9th International Symposium on Next Generation Electronics (ISNE2021)

123 / 2021-04-10 09:45:20

Optimizing the electron leakage of deep ultraviolet laser diode by V-shaped electron blocking layer

electron blocking layer,AlGaN,deep ultraviolet lasers

Compound Semiconductor Materials, and Optoelectro- nic Devices > Physics and Simulation of Optoelectronic Devices

A V-shaped electron blocking layer was proposed to reduce the electron leakage of the deep ultraviolet laser diode in the active region. Three different electron barrier layer structures, rectangular, V-shaped, and inverted V-shaped, were simulated. The electron and hole concentration, radiation recombination rate, P-I and V-I characteristics of the three structural devices were compared, and it was concluded that the V-shaped electron barrier layer can inhibit electron leakage more effectively, thereby improving the optical and electrical properties of the device.