2021 9th International Symposium on Next Generation Electronics (ISNE2021)

130 / 2021-04-13 15:08:39

Study of growth parameters on the well-oriented InxAl1-xN using sputtering on Si (100) substrate

InxAl1–xN films, magnetron sputtering, XPS, Structural properties, Reflectance spectra.

Compound Semiconductor Materials, and Optoelectro- nic Devices > Compound Semiconductor Materials, Devices and Technologies

In_xAl_1–xN is beneficial for developing full-spectrum devices due to its wide direct bandgap tunable from the near infrared to deep ultraviolet. However, the growth of In_xAl_1-xN suffers from the difficulty of phase separation due to large immiscibility and difference of thermal stability between InN and AlN. Here the Influence of growth parameters such as N₂/Ar mixture, sputtering pressure and growth time on In_xAl_1-xN epitaxial layers is investigated and optimized. We further fabricated the In_0.6Al_0.4N photoelectric device, which is revealed consider-able photoelectric effect behavior. Our work is meaningful for In_xAl_1-xN film layer improvement and application in the future.