Abstract Details
133 / 2021-04-14 16:50:55
Design and analysis of XOR logic gate based on Photoelectric Memristor
memristor, photoelectric effect, XOR logic gate, Multisim
Draft Accepted
Memristor is the fourth passive device, that has the advantages of high speed, low power consumption, convenient integration, simple structure, and compatibility with CMOS technology. However, the current implementation of memristors is based on new materials. Although the process is compatible, the fabrication process is complicated and the materials are expensive. It is difficult to realize the large-scale commercial application of memristors. The photoelectric memristor model, proposed by our research group, is well compatible with CMOS technology, and it can be used in digital circuits to achieve faster-switching speed and higher integration density. Therefore a special XOR gate was designed and simulated by Multisim software. The model can be used as an XOR gate from its output waveform characteristics. The XOR gate enables the coexistence of computational and memory circuits, and reduce area and circuit power consumption. Also, it will have broad application prospects in logic operation, brain neural network, computer processing and the like.
Important Date
-
Conference Date
Jul 10
2021
toJul 12
2021
-
May 10 2021
Draft paper submission deadline
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Jul 06 2021
Registration deadline
Sponsored By
Changsha University of Science & Technology
Supported By
IEEE Electron Devices Society
IEEE
IEEE
Contact Information
- Dr. WanghuiZou
- zo******@csust.edu.cn
- 135********
Previous Conferences
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2018-05-07 Taiwan, China
2018 7th International Symposium on Next Generation Electronics -
2017-05-23 Taiwan, China Keelung
2017 6th International Symposium on Next Generation Electronics
