2021 9th International Symposium on Next Generation Electronics (ISNE2021)

137 / 2021-04-15 09:51:26

Characterization of Low-Frequency Noise in Polycrystalline Silicon Thin-Film Transistors under Different Temperature

Low-frequency noise,1/f noise theory,lattice vibration,polycrystalline silicon,thin-film transistors

Microelectronic Devices and Materials > Silicon Integrated Circuits Technologies

In this work, the low-frequency (f) noise in polycrystalline silicon thin-film transistors (TFTs) under the environmental temperature of 300 K and 373 K is characterized and analyzed. The behaviors of the low-f noise obey the classical 1/f theory. The carrier number fluctuation model is found to be the dominant mechanism. The density of defect states inside the devices increases from 2.66 ×  10¹⁶ cm^–3eV^–1 to 6.66 ×  10¹⁷ cm^–3eV^–1 when the substrate temperature increases from 300 K to 373 K. Violent lattice vibration at high temperature may be responsible for degenerated device mobility and increased low-f noise.