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139 / 2021-04-15 20:54:34
The Impact of Temperature on Reconfigurable Field-Effect Transistor and Its Applications
Reconfigurable Field-Effect Transistor,Tunnel Field-Effect Transistor,Temperature characteristic,XNOR operation
Microelectronic Devices and Materials > Nano-Electronic and Nano-Photonic Devices
Final Paper
Wangze Ni / Hunan University
Yichi Zhang / Hunan University
Bairun Huang / Hunan University
Zhuojun Chen / Hunan University
Reconfigurable field-effect transistor (RFET) has attracted great attention which can offer both n- and p- type devices. In this work, temperature characteristic of the RFET is investigated comprehensively, in comparison with tunnel field-effect transistor (TFET). By means of TCAD simulations, the RFET shows a lower subthreshold swing and higher Ion/Ioff ratio over a wide temperature range. To further explore the applications of the RFET, an XNOR operation is obtained through a single RFET. Finally, the impact of temperature on the XNOR is also studied and discussed.

 
Important Date

  • Conference Date

    Jul 10

    2021

    to

    Jul 12

    2021

  • May 10 2021

    Draft paper submission deadline

  • Jul 06 2021

    Registration deadline

Sponsored By
Changsha University of Science & Technology
Supported By
IEEE Electron Devices Society
IEEE
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