2021 9th International Symposium on Next Generation Electronics (ISNE2021)

144 / 2021-04-17 22:49:45

Structure optimization of deep ultraviolet laser diodes with superlattice electron blocking layer

superlattice electron barrier layer,deep ultraviolet laser diode,electron leakage

Compound Semiconductor Materials, and Optoelectro- nic Devices > Physics and Simulation of Optoelectronic Devices

In order to improve the optical and electrical performance of AlGaN-based deep ultraviolet laser diodes (DUV-LDs) and effectively reduce electron leakage in the active region, a superlattice electron blocking layer (EBL) structure is proposed. Based on the reference structure A, this paper designs a superlattice structure B with an upward gradient of Al composition and a superlattice structure C with a downward gradient of Al composition. By using Lastip software to simulate the above three types of structures and comparing their energy band diagram, p-zone electron concentration, P-I and V-I characteristics, it is concluded that the superlattice EBL structure C has the strongest electron blocking ability under the downward gradient Al composition, leading to the optimized device performance such as lower threshold current and higher slope efficiency.