2021 9th International Symposium on Next Generation Electronics (ISNE2021)

69 / 2020-03-23 13:49:12

A Full-region Model for Ultra-Scaled MoS2 MOSFET Covering Direct Source-Drain Tunneling

monolayer MoS2,MoS2 transistor,transistor model,short-channel effects,direct S/D tunneling

Microelectronic Devices and Materials > Nano-Electronic and Nano-Photonic Devices

A full-region model for ultra-scaled monolayer MoS2 MOSFETs is reported in this work. The electrostatic potential in the scaled transistor structure is analyzed based on a first-principle verified potential model. A continuous full region current model is then developed to capture the short channel effects. Based on the potential model, the barrier height and width for direct source-drain tunneling are obtained. The direct tunneling module reproduces the essential physics observed from numerical device simulations. After integration with the thermionic emission model, the full-region current model is implemented into a SPICE simulator and the model convergence is verified by simulating typical circuits.