2021 9th International Symposium on Next Generation Electronics (ISNE2021)

75 / 2020-03-31 19:44:22

MXene/SiO2 Structure-based RRAM devices for the Application of Neuromorphic Computing

resistance switching memory (RRAM),MXene,Neuromorphic computing

Microelectronic Devices and Materials > Advance Memories Technology (Flash, FeRAM, PCM RRAM, MRAM etc.)

A two-dimensional (2D) material MXene (Ti3C2) has been investigated in details. Our RRAM devices, based on the Cu/MXene/SiO2/W structure, exhibit excellent switching performances compared with traditional devices. The impact of the 2D MXene material on the SiO2-based RRAM devices was investigated by the physical characterization of the MXene and first-principles calculation. Furthermore, synaptic plasticity, such as long-term plasticity and paired-pulse facilitation characteristics have been successfully achieved using high performance Cu/MXene/SiO2/W devices.