2021 9th International Symposium on Next Generation Electronics (ISNE2021)

79 / 2020-04-05 21:29:12

Interfacial Modification of Thin Film Transistor via Supercritical Fluids Treatment and Mechanism Exploration

thin film transistors, interfacial modification, hysteresis window, mobility, supercritical fluid.

Microelectronic Devices and Materials > Silicon Integrated Circuits Technologies

As the most fundamental semiconductor device, thin film transistor (TFT) has been studied to explore more opportunities and expand its potential applications. Herein, supercritical fluids (SCCF) methodology has been adopted to treat IGZO-TFT devices and improve the performance. After the treatment, ON state current and the mobility have been greatly improved. Particularly, interfacial modification caused by supercritical treatment makes the transfer characteristics of the device significantly improved with the larger memory window and better subthreshold swing (SS). Material analysis including Fourier Transform Infrared spectroscopy (FTIR) and X-ray Photoelectron Spectroscopy (XPS) confirm that the supercritical HMDS molecules reached the interface between IGZO and gate oxide layer and effectively modified the interface. This work shows that the low-temperature supercritical treatment provides a better improvement of TFT which opens the application field of TFT for system on panel.