2021 9th International Symposium on Next Generation Electronics (ISNE2021)

96 / 2020-07-04 15:00:23

High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1.8W Output Power

E-band,MMIC,GaN,HEMT,power amplifier(PA)

RF and Microwave Circuits > Microwave Circuits

This paper presented a four-stage E-band power amplifier monolithic microwave integrated circuits(MMIC) based on GaN high-electron-mobility transistor(HEMT) with 60nm of gate length. The layout of the proposed circuit shows that the small-signal gain of 21-23dB and power added efficiency(PAE) of 25.5%-27.5% in the E-band low frequency (71-76GHz). The saturated output power of greater than 32.6dBm(1.8W) is achieved with the power gain of more than 12.6 dB and the linear power gain of more than 20dB. The power density of around 1.4W/mm is achieved at the final stage.