China International Youth Conference on Electrical Engineering (CIYCEE 2020)

1132 / 2020-09-29 17:52:02

Optimal Design of GaN HEMT Based High Frequency LLC Converter

LLC converter,optimal design,GaN HEMT,High Efficiency,ZVS

Power Electronics Technology and Application > Control, modeling and optimization of power converter

LLC converter possessing the merits of zero voltage switch (ZVS), voltage regulation ability, magnetic isolation and so on has been widely adopted in data center power supply. As the increasing of data center power consumption, the demands on efficiency and power density for LLC converter is becoming more and more harsh. At the same time, as the prevalence of wide bandgap power device gallium nitride high electron mobility transistor (GaN HEMT), the efficiency and power density promotion of LLC converter is mostly dependent on the evolution of design method. In this paper, a GaN HEMT based LLC converter optimal design method of is proposed, which can realize high efficiency with ZVS guaranteed under wide input voltage range. The correctness of the proposed LLC converter optimal design method has been verified by simulation and experiment results.