98 / 2020-09-25 20:30:16
Fast and Accurate Temperature Estimation of Three-level IGBT Converter Based on 3-D Coupled Thermal Model
Finite-element method (FEM),insulated gate bipolar transistor (IGBT),three-level converter,thermal model,temperature estimation
Final Paper
Qiang Wang / China University of Mining and Technology
Fengyou He / China University of Mining and Technology
Weifeng Zhang / China University of Mining and Technology
The failure and breakdown of power module and converter equipment are mainly caused by temperature factor, so real-time and accurate junction temperature estimation is of vital importance, which is beneficial to realize more reliable and economical energy conversion. In order to obtain the accurate and detailed temperature distribution of the key nodes inside the converter, the thermal coupling effects of different levels are considered in this paper, a complete three-dimensional (3-D) coupled thermal network model for three-level IGBT converter is established, and based on electric-thermal coupling, fast and accurate transient junction temperature extraction is thereby realized under actual working conditions. Finally, the accuracy of the proposed model is verified by the good agreement between the Matlab calculation, the FEM simulation and the experimental measurement.
Important Date
  • Conference Date

    Nov 02

    2020

    to

    Nov 04

    2020

  • Oct 27 2020

    Draft paper submission deadline

  • Nov 03 2020

    Contribution Submission Deadline

  • Nov 04 2020

    Registration deadline

  • Nov 17 2020

    Final Paper Deadline

Sponsored By
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
Organized By
Huazhong University of Science and Technology
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