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A CM EMI Suppression Strategy for the Single-inverter based on the Si/SiC Hybrid Switch
ID：148 View Protection：ATTENDEE Updated Time：2020-10-15 19:59:19 Hits：782 Oral Presentation

Start Time：2020-11-02 14:45（Asia/Shanghai）

Duration：15min

Session：B Power Electronics Technology and Application » B1Session 3 and Session 8

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Abstract
Numerous studies have shown that the Si IGBT/SiC MOSFET hybrid switch has been verified to be a high-efficiency and cost-effective device for the application of the inverter. In fact, the high switching frequency of the SiC MOSFET means high dv/dt, which will generate severe common-mode electromagnetic interference (CM EMI). Meanwhile, it would lead to some malfunction of the power converter. In order to suppress the CM EMI of the single-phase inverter based on the Si/SiC hybrid switch, a CM EMI suppression strategy combining the variable switching patterns and the variable switching frequency will be proposed. Furthermore, the feasibility of the proposed method has been verified by experimental results distinctly.
 
Keywords
CM EMI,inverter,Si/SiC hybrid switch,single-phase,suppression strategy
Speaker
Shuaige Zhu
Hunan University

Submission Author
Shuaige Zhu Hunan University
Zishun Peng Hunan University
Ling Ou Hunan University
Haiyan Zhu Hunan University
Qihui Fu Hunan University
Pei Xiao Hunan University
Yuxing Dai Wenzhou University
Jun Wang Hunan University
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Important Date

  • Conference Date

    Nov 02

    2020

    to

    Nov 04

    2020

  • Oct 27 2020

    Draft paper submission deadline

  • Nov 03 2020

    Contribution Submission Deadline

  • Nov 04 2020

    Registration deadline

  • Nov 17 2020

    Final Paper Deadline

Sponsored By
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
Organized By
Huazhong University of Science and Technology
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