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A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant Converter
ID：106 View Protection：ATTENDEE Updated Time：2021-07-21 20:06:13 Hits：1508 Oral Presentation

Start Time：2021-08-27 14:30（Asia/Shanghai）

Duration：15min

Session：Room2 Oral Session 2 » S7&S8WBG Power Converters & WBG Device Characteristic and Converter Modeling

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Abstract
Abstract—Data centers demand high-current, high-efficiency and low-cost power solutions. And the high frequency resonant converter is more attractive in industrial application because of its high power density and high efficiency. This paper presents a modular and linear extendable single-stage DCX with high voltage conversion ratio which based on high frequency LLC resonant converter. The converter using a planar matrix transformer has successfully achieved ZVS in the primary side as well as ZCS in the secondary side. Meanwhile, GaN devices are also applied due to their much lower parasitic capacitance compared to that of high voltage Si MOSFET. A 500 kHz, 400-6 V, 600 W isolated prototype with high conversion ratio has been built and tested as well, which achieved 91.1% peak efficiency.
 
Keywords
Isolated modular converter,High frequency,LLC resonant converter,Planar matrix transformer,GaN devices
Speaker
Wen Zhaoliang
student Harbin Institute of Technology

Submission Author
Guan Yueshi Harbin Institue of Technology
Wen Zhaoliang Harbin Institute of Technology
Yijie Wang Harbin Institute of Technology
Dianguo Xu Harbin Institute of Technology
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Important Date

  • Conference Date

    Aug 25

    2021

    to

    Aug 27

    2021

  • Apr 21 2021

    Abstract Submission Deadline

  • May 15 2021

    Abstract Notification of Acceptance

  • Jun 25 2021

    Final Paper Deadline

  • Aug 24 2021

    Contribution Submission Deadline

  • Aug 27 2021

    Registration deadline

Sponsored By
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
Organized By
Huazhong University of Science and Technology
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