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Development of High Voltage SiC Power MOSFETs
ID：122 View Protection：ATTENDEE Updated Time：2021-07-26 13:34:54 Hits：1406 Invited speech

Start Time：2021-08-26 15:10（Asia/Shanghai）

Duration：40min

Session：K Plenary Session » K2Plenary Session 2

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Abstract
Development of High Voltage SiC Power MOSFETs
Keywords
Speaker
Song Bai
State Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices

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Important Date

  • Conference Date

    Aug 25

    2021

    to

    Aug 27

    2021

  • Apr 21 2021

    Abstract Submission Deadline

  • May 15 2021

    Abstract Notification of Acceptance

  • Jun 25 2021

    Final Paper Deadline

  • Aug 24 2021

    Contribution Submission Deadline

  • Aug 27 2021

    Registration deadline

Sponsored By
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
Organized By
Huazhong University of Science and Technology
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