IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

Evaluating switching performance of the gallium nitride high electron mobility transistor (GaN HEMT) is critical for its application in power converter/inverter. In this paper, an analytical model is proposed to comprehensively evaluate switching characteristics of GaN HEMT. The model has considered nonlinear junction capacitance as well as forward and reverse transconductance, skin effect during oscillation period, and interactions between high- and low-side GaN HEMTs. As a result, the switching losses, switching oscillation, and crosstalk issue during switching transient can be correctly reflected together. Comparisons between simulation and experiment results manifest that the model can evaluate switching performance of the GaN HEMT in higher accuracy compared with other existing models. Consequently, the model is expected to provide many valuable design references in applying GaN HEMT.
 

Gallium nitride high electron mobility transistor (GaN HEMT), switching loss, switching oscillation, crosstalk, analytical modeling.