IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

Traditional Si-based semiconductors have a large reverse recovery charge, which brings great challenges to the application of totem-pole bridgeless PFC. With the rise of the third-generation semiconductor device SiC/GaN, totem-pole bridgeless PFC has gradually attracted people's attention. This paper designs a high-power density, high-efficiency bidirectional AC/DC converter based on GaN HEMTs. When working in the forward direction, the totem-pole bridgeless PFC is connected to a synchronous Buck to realize 220V@AC input, and 300V to 400V@DC 1A constant current output; When working in the reverse direction, Boost is connected to a unipolar inverter to achieve 300V to 400V@DC input, 220V 1.5A@AC output, and the output frequency and phase can follow the reference sinusoidal signal. The converter can realize 400W power conversion, with a peak efficiency of 97.2% and power density of 85W/inch3.

Totem-pole bridgeless PFC,GaN,High power density