IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

The operation of silicon carbide (SiC) power semiconductor devices under high ambient temperature requires high temperature gate drivers adjacent to the devices. This paper presents a three-phase isolated gate driver circuit suitable for HybridPACK Drive (HP Drive) modules with operating ambient temperature up to 175℃. First, an overall introduction of the gate driver structure and function is presented. Second, detailed designs are presented in the form of submodules such as desaturation protection circuit, isolated power supply circuit, active Miller clamp (AMC) circuit, undervoltage lockout circuit and so on. Third, the proposed gate driver design is validated through double pulse test, continuous full-load operation with an ambient temperature of 150℃ and light load test under 175℃.

Gate Driver,high temperature