IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

The emerging gallium nitride-based (GaN) semiconductor device due to lower switching loss and smaller package size enables multi-phase point-of-load (POL) converters toward higher power density and efficiency in data centers. This paper presents an integrated GaN-based power module with high power density and high efficiency, which is based on active integration and passive integration techniques. The integrated GaN-based power module not only can achieve lower parasitic parameters, but also can achieve efficient cooling capability employing a multifunctional integrated magnetic component. The component plays an important roles of both the integrating four filter inductors and heat sink of the integrated power module. A 150 W, 12-1.8 V, simulation and experimental prototype of the integrated power module is designed. The simulation results demonstrate that the integrated power module has lower parasitic parameters, and good themal performance.
 

inductor,GaN