IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

A high-voltage 6.5kV/100A 4H-SiC PiN rectifier with multiple-ring modulated junction termination extension (MRM-JTE) is designed, fabricated and characterized in this paper. The MRM-JTE expands the JTE implantation dose window and increases the breakdown voltage in comparison with the traditional two-zone JTE (TZ-JTE) without an additional process steps and the number of masks. The design and optimization for the proposed devices are performed using two-dimensional numerical simulation tool TCAD Silvaco. A measured breakdown voltage of SiC PiN is up to 7.4kV corresponding to 91% of the ideal parallel plane junction. The forward voltage drop for the fabricated device with the active area of chip of 4.6×4.6mm² is 3.8V at 100A forward current, and the differential specific on-resistance (R_ON,SP) is 2.5Ωm·cm² at 100A/cm² forward current density. In addition, the dynamic reverse recovery time is 166ns and softness factor is 1.23 at room temperature. The wide implantation dose window and high terminal efficiency show that the fabricated 4H-SiC PiN rectifier has an improve effect on the junction curvature effect, which is of great significance for the further fabrication of high-voltage and high-power SiC modules.

SiC PiN rectifier,MRM-JTE,high voltage,specific on-resistance,reverse recovery