LLC Resonant Converter Based on Trench Gate SiC MOSFET
ID:46 View Protection:PUBLIC Updated Time:2021-08-21 11:02:42 Hits:1359 Poster Presentation

Start Time:2021-08-27 12:22(Asia/Shanghai)

Duration:1min

Session:P Poster » P1Poster 1

Abstract
LLC resonant converter has become a popular topology for DC-DC converters because of its soft switching characteristics. It has many advantages such as high efficiency, high power density, and low noise. The traditional Si MOSFET LLC resonant converter cannot continue to improve due to the limitations of the Si characteristics in terms of frequency and efficiency. This article explores the advantages of SiC MOSFET in LLC resonant converter, and compares the conversion efficiency for trench-gate SiC MOSFET, planar-gate SiC MOSFET and Si MOSFET.
Keywords
LLC resonant converte,SiC MOSFET,reverse recovery characteristics,efficiency
Speaker
Jinkun Chu
Anhui University of Technology

Submission Author
Jinkun Chu Anhui University of Technology
Yuming Zhou Anhui University of Technology
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Important Date
  • Conference Date

    Aug 25

    2021

    to

    Aug 27

    2021

  • Apr 21 2021

    Abstract Submission Deadline

  • May 15 2021

    Abstract Notification of Acceptance

  • Jun 25 2021

    Final Paper Deadline

  • Aug 24 2021

    Contribution Submission Deadline

  • Aug 27 2021

    Registration deadline

Sponsored By
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
Organized By
Huazhong University of Science and Technology