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Comparison of Two Types of Single Gate Drivers for SiC MOSFET Stacks in Flyback Converters
ID：65 View Protection：ATTENDEE Updated Time：2021-07-22 10:08:02 Hits：1487 Oral Presentation

Start Time：2021-08-27 14:45（Asia/Shanghai）

Duration：15min

Session：Room2 Oral Session 2 » S7&S8WBG Power Converters & WBG Device Characteristic and Converter Modeling

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Abstract
In some high-voltage low-power applications, silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) stack is required to withstand the high voltage. Instead of using separated gate driver for each device, the single gate driver only requires one standard gate driver to drive all the devices in the stack with the help of some passive components. However, it is vulnerable to the voltage oscillation of power loop due to its working principal. Therefore, in this paper, the single gate driver is analyzed in a flyback converter application since an abrupt voltage dropping would occur when it is operating in discontinuous conduction mode (DCM), and two types of single gate drivers are compared. Besides, in order to obtain better switching performance, suitable design guidelines are provided for both two types. Finally, the experimental results verify the correctness of the analysis.  
Keywords
SiC MOSFET stack; single gate driver; flyback converter
Speaker
Rui Wang
Doctor Aalborg University

Submission Author
Rui Wang Aalborg University
Hongbo Zhao Aalborg University
Stig Munk-Nielsen Aalborg University
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Important Date

  • Conference Date

    Aug 25

    2021

    to

    Aug 27

    2021

  • Apr 21 2021

    Abstract Submission Deadline

  • May 15 2021

    Abstract Notification of Acceptance

  • Jun 25 2021

    Final Paper Deadline

  • Aug 24 2021

    Contribution Submission Deadline

  • Aug 27 2021

    Registration deadline

Sponsored By
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
Organized By
Huazhong University of Science and Technology
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