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The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET
ID：75 View Protection：ATTENDEE Updated Time：2021-07-21 20:05:54 Hits：1706 Oral Presentation

Start Time：2021-08-27 16:45（Asia/Shanghai）

Duration：15min

Session：Room2 Oral Session 2 » S7&S8WBG Power Converters & WBG Device Characteristic and Converter Modeling

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Abstract
Abstract—The conduction characteristics of the third quadrant of SiC MOSFET are mainly the current sharing between the MOS channel and the body diode which can be affected by many factors. This paper presents a comprehensive study of the influence of dynamic threshold voltage drift on third quadrant characteristics of SiC MOSFET. By combining the equivalent potential model, TCAD simulation, and experiment, it is revealed that once the threshold drifts by dynamic gate voltage stress, the static and dynamic characteristics of third quadrant of SiC MOSFET will change. Furthermore, the current sharing of parallel devices is also affected by dynamic threshold voltage drift. These results provide an effective guide for the third quadrant application of SiC MOSFET.
Keywords
Body diode,SiC MOSFET,Third quadrant characteristics,Dynamic threshold voltage drift
Speaker
Lei Tang
Chongqing university

Submission Author
Lei Tang Chongqing university
Huaping Jiang Chongqing university
Hua Mao Chongqing university
Zebing Wu Chongqing university
Xiaohan Zhong Chongqing university
Xiaowei Qi Chongqing university
RAN LI Chongqing university
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Important Date

  • Conference Date

    Aug 25

    2021

    to

    Aug 27

    2021

  • Apr 21 2021

    Abstract Submission Deadline

  • May 15 2021

    Abstract Notification of Acceptance

  • Jun 25 2021

    Final Paper Deadline

  • Aug 24 2021

    Contribution Submission Deadline

  • Aug 27 2021

    Registration deadline

Sponsored By
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
Organized By
Huazhong University of Science and Technology
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