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Design of a 10kW, High-Frequency Dual Active Bridge Converter Using SiC Devices
ID：78 View Protection：ATTENDEE Updated Time：2021-07-21 20:05:56 Hits：1636 Oral Presentation

Start Time：2021-08-27 14:15（Asia/Shanghai）

Duration：15min

Session：Room2 Oral Session 2 » S7&S8WBG Power Converters & WBG Device Characteristic and Converter Modeling

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Abstract
Dual active bridge (DAB) converter is widely used as a dc transformer in high power applications. This paper gives a general design method for high-frequency DAB converter using silicon carbide (SiC) MOSFETs, and gives mathematical analysis for designing the inductor and transformer for the DAB converter. The inductance calculation is critical in the designing process, especially in the high-frequency area, considering the dead-time effect and zero-voltage-switching (ZVS) requirement. It can be divided into four steps, including converter power requirement, inductor energy requirement, dead-time effect requirement and rms of the inductor current. A 10kW, 100kHz DAB converter using SiC MOSFETs is built, achieving ZVS turn-on successfully. The efficiency is up to 97.1% at 10kW, and the power density is 4.18W/cm3.
Keywords
Dual active bridge; SiC ; inductor; ZVS; deadtime
Speaker
Haoyuan Jin
Xi'an Jiaotong University

Submission Author
Haoyuan Jin Xi'an Jiaotong University
Huaqing Li Xi'an Jiaotong University
Junduo Wen Xi'an Jiaotong University
ChengZi Yang Xi'an Jiaotong University
Hang Kong Xi'an Jiaotong University
Laili Wang Xi'an Jiaotong University
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Important Date

  • Conference Date

    Aug 25

    2021

    to

    Aug 27

    2021

  • Apr 21 2021

    Abstract Submission Deadline

  • May 15 2021

    Abstract Notification of Acceptance

  • Jun 25 2021

    Final Paper Deadline

  • Aug 24 2021

    Contribution Submission Deadline

  • Aug 27 2021

    Registration deadline

Sponsored By
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
Organized By
Huazhong University of Science and Technology
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