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Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions
ID：86 View Protection：ATTENDEE Updated Time：2021-07-21 20:06:01 Hits：1678 Oral Presentation

Start Time：2021-08-27 10:30（Asia/Shanghai）

Duration：15min

Session：Room1 Oral Session 1 » S1&S2WBG Device Modeling, Simulation and Reliability

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Abstract
Power electronic systems based on Gallium Nitride (GaN) devices are expected to significantly reduce the power losses and increase the power density. This makes GaN power devices very promising for next-generation power electronics, like the applications in electric vehicles, 5G communication, lasers, and renewable energy. However, reliability issues are still an obstacle to the widespread application of p-GaN high electron mobility transistor (HEMT). It is of great significance to study the reliability of p-GaN HEMT to withstand unclamped inductive switching (UIS) shock. This work explains its unique failure mechanism through UIS testing of commercial 200V p-GaN HEMT. During the entire UIS process, the p-GaN HEMT do not consume the energy stored by the load inductance, and the energy transferred from the load inductance makes the electric field of the dielectric under the source field plate (SFP) of the device rise rapidly. This high peak electric field causes the catastrophic breakdown of the passivation layer. The UIS withstanding capability of p-GaN HEMT is inherent to the weakness of its structure. Without p-n junction to support high drain voltage, the GaN HEMTs do not have avalanche capability. Once the drain-source voltage VDS exceeds the critical peak voltage Vpeak, failure occurs. Our investigation provides a comprehensive criterion for the reliability evaluation of p-GaN HEMT.
Keywords
200V p-GaN HEMT; UIS; failure mechanism; SFP
Speaker
Xuan Li
University of Electronic Science and Technology of China

Submission Author
Junjie Ye University of Electronic Science and Technology of China
Xuan Li University of Electronic Science and Technology of China
Xiaochuan Deng University of Electronic Science and Techonology of China
Bo Zhang University of Electronic Science and Technology of China
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Important Date

  • Conference Date

    Aug 25

    2021

    to

    Aug 27

    2021

  • Apr 21 2021

    Abstract Submission Deadline

  • May 15 2021

    Abstract Notification of Acceptance

  • Jun 25 2021

    Final Paper Deadline

  • Aug 24 2021

    Contribution Submission Deadline

  • Aug 27 2021

    Registration deadline

Sponsored By
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
Organized By
Huazhong University of Science and Technology
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