IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

In order to reduce switching time and on resistance of SiC MOSFET, higher voltage and lower R_G are often selected in driving circuit, but also these factors affect the gate reliability. Therefore, this paper has proposed a method to select the parameters of driving circuit. Firstly, the driving equivalent circuit has been analyzed and the constraints between parameters has been given. Sencondly, the parameters have been calculated with consideration of gate safety and the influence of parasitic parameters have been analyzed. Finally, by building a experimental platform, the research focused on the optimized parameter selection has been carried out, which can verify the feasibility of the method.

SiC MOSFET,gate driving circuit,parameter selection