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157 / 2021-10-29 12:00:54
A New V-groove Trench SiC-MOSFET and an Improved Circuit Pattern for a Low-Los High-Power Single-Ended Wireless EV Charger
Single-Ended,SiC,Electric Vehicle,Wireless Power Transfer,Charger,V-groove trench
Wireless power transfer technology > Devices and systems for short-distance wireless power transfer
Draft Accepted
Shougo Hirooka / Osaka Institute of Technology
Hideki Omori / Osaka Institute of Technology
Kunihiro Sakamoto / National Institute of Advanced Industrial Science and Technology
Toshimitsu Morizane / Osaka Institute of Technology
Hidehito Matayoshi / Osaka Institute of Technology
In this paper, we propose a new SiC-VMOSFET single-ended converter that realizes a low-cost, compact and lightweight wireless EV charger, which is the key device for the popularization of electric vehicles in recent years. A three-fold  transfer power and 1/6  power device loss have been achieved by an improved drive pattern, a newly developed V-groove trench SiC-MOSFET, and a new type of low switching loss circuit topology.

In this paper, we propose a new SiC-VMOSFET single-ended converter that realizes a low-cost, compact and lightweight wireless EV charger, which is the key device for the popularization of electric vehicles in recent years. A three-fold  transfer power and 1/6  power device loss have been achieved by an improved drive pattern, a newly developed V-groove trench SiC-MOSFET, and a new type of low switching loss circuit topology.
Important Date

  • Conference Date

    Jul 11

    2023

    to

    Aug 18

    2023

  • Nov 10 2021

    Draft paper submission deadline

  • Dec 10 2021

    Registration deadline

  • Dec 11 2021

    Contribution Submission Deadline

Sponsored By
IEEE IAS
Organized By
IEEE IAS Student Chapter of Southwest Jiaotong University (SWJTU)
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
IEEE PELS (Power Electronics Society) Student Chapter of HUST
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