278 / 2021-11-08 16:30:15
Investigation and Comparison of SiC Freewheeling Diode for Switching Characteristics and Losses
SiC freewheeling diode; switching loss; switching characteristics
Final Paper
Ziyan Tang / Huazhong University of Science and Technology
Yue Xie / Huazhong University of Science and Technology
Jiajia Guan / Huazhong University of Science and Technology
Cai Chen / Huazhong University of Science and Technology
Yong Kang / Huazhong University of Science and Technology;School of Electrical and Electronic Engineering
The traditional half-bridge circuit needs the inverse parallel diode for freewheeling. In recent years, some SiC applications have canceled the inverse parallel diode. To compare the advantages and disadvantages of canceling inverse parallel diode, this paper studies the influence of inverse parallel diode from the perspective of switching loss. In this paper, SBD, MOSFET, and MOSFET+SBD are used as freewheeling diodes to compare the circuit’s switching characteristics and switching loss. The three circuits were tested by simulation and building a double-pulse test prototype. The method of calculating the switching loss based on the drain current and the channel current is adopted respectively to evaluate the switching loss of the three better. The results show that the dynamic characteristics of the circuit become worse when MOSFET+SBD is used, in which total loss is larger than that of SBD and MOSFET, while turn-off loss is smaller.



 
Important Date
  • Conference Date

    Jul 11

    2023

    to

    Aug 18

    2023

  • Nov 10 2021

    Draft paper submission deadline

  • Dec 10 2021

    Registration deadline

  • Dec 11 2021

    Contribution Submission Deadline

Sponsored By
IEEE IAS
Organized By
IEEE IAS Student Chapter of Southwest Jiaotong University (SWJTU)
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
IEEE PELS (Power Electronics Society) Student Chapter of HUST