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95 / 2021-10-23 00:54:15
Crosstalk Analysis and Suppression of Silicon Carbide MOSFET based Three-level Neutral-Point-Clamped Inverter
Power electronics technology and application > Power converter topologies and design
Final Paper
Qiaopo Xiong / 722th Research Institute of CSSC
Gen Long / 722th Research Institute of CSSC
Junyao Tu / 722th Research Institute of CSSC
Huida Gao / Huazhong University of Science and Technology
Wubin Kong / Huazhong University of Science and Technology
This paper analyzes the gate-source characteristic of Silicon Carbide (SiC) MOSFET in Three-level Neutral-Point Clamped (3L-NPC) Inverter. To analyze the switching process of the SiC MOSFET, the bridge arm crosstalk and gate voltage oscillation phenomenon of the 3L-NPC, the mathematical model of the cross-talk voltage based on 3L-NPC is introduced. The switching period of the SiC devices is analyzed which include the crosstalk and parasitic oscillation. According to this, the snubber circuit and the gate voltage surge suppression circuit are designed, which also include overcurrent and overvoltage protection. The experiment shows good results of the proposed analyzes.

 
Important Date

  • Conference Date

    Jul 11

    2023

    to

    Aug 18

    2023

  • Nov 10 2021

    Draft paper submission deadline

  • Dec 10 2021

    Registration deadline

  • Dec 11 2021

    Contribution Submission Deadline

Sponsored By
IEEE IAS
Organized By
IEEE IAS Student Chapter of Southwest Jiaotong University (SWJTU)
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
IEEE PELS (Power Electronics Society) Student Chapter of HUST
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