172 / 2023-04-15 10:39:20
Pressure-induced isosymmetric phase transitions, ultrahigh ductility, and metallization in α-Ag2S
phase transition,inorganic semiconductor,high pressure,metallization
Abstract Accepted
Azkar Saeed Ahmad / Guangdong Technion Israel Institute of Technology

Ag2S belongs to a large family of silver chalocogenides Ag2M (M = S, Se, and Te) that have been actively investigated for novel topological properties. For example, β-Ag2Te has been identified as a topological insulator with gapless Dirac-type surface states [1]. The orthorhombic Cmce−Ag2S is predicted to be a topological nodal-line semimetal with a single glide symmetry-protected nodal loop [2]. Unfortunately, this phase is yet to be synthesized and the stable α-Ag2S is just a conventional semiconductor at ambient pressure. Previous works reported that pressure can tune the lattice and electronic structures of different Ag2S phases away from the pristine states [3,4]. However, the crystal structures and electronic properties of these high-pressure (HP) phases are still under debate because of the difficulties in structural solutions based on HP diffraction data, calling for more accurate experiments toward this issue.

Here, we present a comprehensive and multifaceted investigation of the HP behaviors of α-Ag2S.We report two reversible pressure-induced isosymmetric phase transitions in α-Ag2S that are accompanied by two compressive anomalies at 7.5 and 16 GPa. The first transition arises from a sudden and drastic puckering of the wrinkled Ag-S layers, which leads to an anomalous structural softening at high pressure and gives rise to the ultrahigh compressive ductility in α-Ag2S. The second transition stems from a pressure-driven electronic state crossover from a conventional semiconductor to a topological metal. Our findings not only reveal the underlying mechanism responsible for the ultrahigh ductility in this class of inorganic semiconductors, but also provide a distinctive member to the growing family of topological metals and semimetals.



[1] W. Zhang, R. Yu, W. Feng, Y. Yao, H. Weng, X. Dai, and Z. Fang, Topological aspect and quantum magnetoresistance of β−Ag2Te, Phys. Rev. Lett. 106, 156808 (2011).



[2] H. Huang, K. H. Jin, and F. Liu, Topological nodal-line semimetal in nonsymmorphic Cmce-phase Ag2S, Phys. Rev. B 96, 115106 (2017).



[3] Z. Zhao, H. Wei, and W. L. Mao, Pressure tuning the lattice and optical response of silver sulfide, Appl. Phys. Lett. 108, 261902 (2016).



[4] D. Santamaria-Perez, M. Marques, R. Chulia-Jordan, J. M. Menendez, O. Gomis, J. Ruiz-Fuertes, J. A. Sans, D. Errandonea, and J. M. Recio, Compression of silver sulfide: x-ray diffraction measurements and total-energy calculations, Inorg. Chem. 51, 5289 (2012).

Important Date
  • Conference Date

    Jun 05

    2023

    to

    Jun 09

    2023

  • Apr 30 2023

    Early Bird Registration

  • May 01 2023

    Abstract Submission Deadline

  • May 01 2023

    Abstract Notification of Acceptance

  • May 01 2023

    Draft paper submission deadline

  • May 31 2023

    Registration deadline

Sponsored By
Science and Technology on Plasma Physics Laboratory
Department of Astronomy, Beijing Normal University
Organized By
Matter and Radiation at Extremes
Institute of Fluid Physics, China Academy of Engineering Physics, China
Institute of Applied Physics and Computational Mathematics, Beijing, China
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